Enhanced damage accumulation in carbon implanted silicon

Abstract

The accumulation of damage in Si implanted with 12C+ was investigated experimentally using aligned Rutherford backscattering analysis. The damage protiles in Si implanted with 12C+ or 11B+ at 50 keV to the same doses and dose rate were compared. It was found that the damage accumulates at a noticeably higher rate by 12C+ implantation than by 11B+, especially for doses >2X 1Or5 cmm2. In order to explain our results we suggest that self-interstitial Si atoms are captured by the implanted C atoms, forming complex defects which are stable at room temperature.