Structural change and heteroepitaxy induced by rapid thermal annealing of CaF/sub 2/ films on Si(111)
dc.contributor.author | Mattoso Filho, Ney Pereira | pt_BR |
dc.contributor.author | Mosca Junior, Dante Homero | pt_BR |
dc.contributor.author | Schreiner, Wido Herwig | pt_BR |
dc.contributor.author | Mazzaro, Irineu | pt_BR |
dc.contributor.author | Teixeira, Sergio Ribeiro | pt_BR |
dc.contributor.author | Macedo, Waldemar A.A. | pt_BR |
dc.contributor.author | Martins, M.D. | pt_BR |
dc.date.accessioned | 2020-01-23T04:06:12Z | pt_BR |
dc.date.issued | 1998 | pt_BR |
dc.identifier.issn | 0734-2101 | pt_BR |
dc.identifier.uri | http://hdl.handle.net/10183/204899 | pt_BR |
dc.description.abstract | In this article we show that heteroepitaxial CaF2 films can be induced on Si~111! with a rapid thermal anneal. The change from preferentially oriented polycrystals to a single crystal with type- B epitaxy is visible by different structural techniques. The x-ray photoelectron spectroscopy results indicate the presence of a reacted layer at the CaF2 /Si interface with a pronounced increase of fluorine atoms at this interface. Transmission electron microscopy results show that big structural changes occur due to the thermal pulse. | en |
dc.format.mimetype | application/pdf | pt_BR |
dc.language.iso | eng | pt_BR |
dc.relation.ispartof | Journal of Vacuum Science & Technology a : Vacuum, Surfaces and Films. New York. Vol. 16, no. 4 (Jul./Aug. 1998), p. 2437-2441 | pt_BR |
dc.rights | Open Access | en |
dc.subject | Filmes finos | pt_BR |
dc.subject | Crescimento epitaxial | pt_BR |
dc.subject | Microscopia eletrônica de transmissão | pt_BR |
dc.subject | Difração de raios X | pt_BR |
dc.title | Structural change and heteroepitaxy induced by rapid thermal annealing of CaF/sub 2/ films on Si(111) | pt_BR |
dc.type | Artigo de periódico | pt_BR |
dc.identifier.nrb | 000136279 | pt_BR |
dc.type.origin | Estrangeiro | pt_BR |
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