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dc.contributor.authorRamasubramaniam, Ashwinpt_BR
dc.contributor.authorMuniz, André Rodriguespt_BR
dc.date.accessioned2019-09-05T02:33:18Zpt_BR
dc.date.issued2014pt_BR
dc.identifier.issn1098-0121pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/198804pt_BR
dc.description.abstractWe present a density functional theory study of the thermodynamic and electronic properties of phosphorene nanoribbons. We consider a variety of terminations and reconstructions of ribbon edges, both with and without hydrogen passivation, and calculate an ab intio phase diagram that identifies energetically preferred edges as a function of temperature and hydrogen partial pressure. These studies are also accompanied by detailed electronic structure calculations from which we find that ribbons with hydrogenated edges are typically direct gap semiconductors with fundamental gaps that are in excess of phosphorene, the gaps varying inversely with ribbon width. In contrast, ribbons with bare or partially passivated edges either have metallic edges or are semiconducting with band gaps that are smaller than those of their hydrogenated counterparts due to the appearance of midgap edge states. Overall, our studies provide a basis for tailoring the electronic properties of phosphorene nanoribbons by controlling the edge termination via processing conditions (temperature and hydrogen partial pressure) as well as by confinement of carriers via control over ribbon width.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofPhysical review. Ridge, NY. Vol. 90, no. 8 (Aug. 2014), p. 085424-1- 085424-7pt_BR
dc.rightsOpen Accessen
dc.subjectNanomateriaispt_BR
dc.subjectPropriedades termodinâmicaspt_BR
dc.subjectPropriedades eletrônicaspt_BR
dc.titleAb initio studies of thermodynamic and electronic properties of phosphorene nanoribbonspt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000964210pt_BR
dc.type.originEstrangeiropt_BR


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