Interaction of HfO/sub 2//SiO/sub 2/Si structures with deuterium gas
dc.contributor.author | Driemeier, Carlos Eduardo | pt_BR |
dc.contributor.author | Miotti, Leonardo | pt_BR |
dc.contributor.author | Radtke, Claudio | pt_BR |
dc.contributor.author | Gusev, Evgeni P. | pt_BR |
dc.contributor.author | Kim, M.J. | pt_BR |
dc.contributor.author | Wallace, Robert M. | pt_BR |
dc.date.accessioned | 2016-05-20T02:10:33Z | pt_BR |
dc.date.issued | 2006 | pt_BR |
dc.identifier.issn | 0003-6951 | pt_BR |
dc.identifier.uri | http://hdl.handle.net/10183/141421 | pt_BR |
dc.description.abstract | HfO2 films 2.5 to 12 nm deposited on thermal SiO2 1.5 nm on Si were annealed in deuterium gas at 400–600 °C and incorporated D amounts were quantified using the D 3He, p 4He nuclear reaction.We found 1013 D cm−2 in the SiO2 interlayer region and up to 2.2 1014 D cm−2 near the HfO2 surface, whereas D amounts in the bulk of the HfO2 films were determined to be below 1013 cm−2. However, analyses employing the 1H 15N, 12C nuclear resonant reaction showed much more spurious H present in the bulk of HfO2 films. Mechanisms of D incorporation and desorption as well as contribution of the present results to the understanding of HfO2-based devices are discussed. | en |
dc.format.mimetype | application/pdf | pt_BR |
dc.language.iso | eng | pt_BR |
dc.relation.ispartof | Applied physics letters. Vol. 88, no. 4 (Jan. 2006), 041918, 3 p. | pt_BR |
dc.rights | Open Access | en |
dc.subject | Semicondutores elementares | pt_BR |
dc.subject | Silício | pt_BR |
dc.subject | Compostos de silício | pt_BR |
dc.title | Interaction of HfO/sub 2//SiO/sub 2/Si structures with deuterium gas | pt_BR |
dc.type | Artigo de periódico | pt_BR |
dc.identifier.nrb | 000555815 | pt_BR |
dc.type.origin | Estrangeiro | pt_BR |
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